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| MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-HB * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 8 10.5 B1 B3 B5 (P)+ 20 14 0 62.5 -0.2 740.25 20 14 86 11-M4 (10) 18.5 24.8 26 LABEL 7 4 2 28.2 B2 U B6 18.5 B4 V (N)- 18.5 800.25 94 P (+) B1 B3 U B2 13 13 B4 B5 V B6 N (-) W W 18.5 (10) 4-5.40.1 10 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 350 4.5 100 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 520 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 B(E) teminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=100A, IB=150mA IC=-100A (diode forward voltage) IC=100A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=100A, IB1=150mA, -IB2=2.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.35 1.3 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) 2 Tj=25C DC CURRENT GAIN hFE 10 4 7 5 4 3 2 10 3 7 5 4 3 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 160 IB=200mA 120 IB=100mA 80 IB=50mA IB=20mA VCE=2.5V 40 IB=10mA 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 0 1 2 3 4 5 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.0 2.4 2.8 3.2 3.6 VBE (V) 4.0 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) VBE(sat) VCE(sat) SATURATION VOLTAGE IB=100mA Tj=25C Tj=125C 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 VCC=300V 7 IB1=150mA 5 IB2=-2.0A 4 3 2 ts 10 0 7 5 tf 4 3 ton 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 3 IC=75A 2 IC=50A IC=30A 1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 BASE CURRENT IB (A) SWITCHING TIME ton, ts, tf (s) 2 3 4 5 7 10 2 IC (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 VCC=300V IB1=150mA IC=75A ts REVERSE BIAS SAFE OPERATING AREA 300 COLLECTOR CURRENT IC (A) ts, tf (s) 200 IB2=-2.0A IB2=-3.5A 100 SWITCHING TIME tf Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Tj=125C 0 0 100 200 300 400 500 600 700 800 10 0 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. 500s 100s COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 500s 1ms DC 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 0.3 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 2 Tj=25C Tj=125C Irr Qrr 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 10 0 10 0 7 trr 5 VCC=300V 3 IB1=150mA 2 IB2=-2.0A 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) |
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